NTB6413ANT4G - onsemi

Manufacturer Part Number

NTB6413ANT4G

Manufacturer

onsemi

Introduction

The NTB6413ANT4G is a high-performance N-channel MOSFET transistor suitable for various power management and switching applications.

Product Features and Performance

Supports a wide drain-to-source voltage up to 100V

Low on-resistance of 28mΩ at 42A, 10V

High continuous drain current of 42A at 25°C

Wide operating temperature range of -55°C to 175°C

Fast switching capability with low gate charge of 51nC at 10V

Compact DPAK surface mount package

Product Advantages

Excellent power efficiency and thermal performance

Reliable and robust design for demanding applications

Versatile usage across various power electronics systems

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 28mΩ @ 42A, 10V

Continuous Drain Current (Id): 42A at 25°C

Input Capacitance (Ciss): 1800pF @ 25V

Power Dissipation (Tc): 136W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for use in various power electronics applications

Application Areas

Power supplies

Motor drives

Voltage regulators

Inverters

White goods

Industrial equipment

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement or upgrade options available

Key Reasons to Choose This Product

High power efficiency and thermal performance

Reliable and robust design for demanding applications

Wide voltage and current handling capabilities

Fast switching capability for improved system response

Compact surface mount package for space-constrained designs

Compliance with RoHS regulations for environmental responsibility