Manufacturer Part Number
NTB6411ANT4G
Manufacturer
onsemi
Introduction
High-power N-channel MOSFET for power switching applications
Product Features and Performance
High-power handling capability with 77A continuous drain current at 25°C
Low on-resistance of 14mΩ @ 72A, 10V
Wide operating temperature range of -55°C to 175°C
Fast switching speed with 100nC gate charge at 10V
High breakdown voltage of 100V
Product Advantages
Excellent thermal performance
Robust design for high-reliability applications
Optimized for efficient power conversion
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)): 14mΩ @ 72A, 10V
Continuous Drain Current (Id): 77A @ 25°C
Input Capacitance (Ciss): 3700pF @ 25V
Power Dissipation (Tc): 217W
Quality and Safety Features
MOSFET technology for high reliability
Compliant with RoHS and REACH standards
DPAK package for efficient heat dissipation
Compatibility
Suitable for various power switching applications, including DC-DC converters, motor drives, and power supplies
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Telecommunications equipment
Product Lifecycle
Current, actively supported product
Replacement or upgrade options available from onsemi
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Fast switching speed for high-frequency power conversion
Robust design and quality features for reliable performance
NTB6410ANAMI Semiconductor/onsemi