NTB25P06T4G - onsemi

Manufacturer Part Number

NTB25P06T4G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single Transistor MOSFET, P-Channel

Product Features and Performance

Wide operating temperature range: -55°C to 175°C

High drain-to-source voltage: 60V

Low on-resistance: 82mΩ @ 25A, 10V

High continuous drain current: 27.5A @ 25°C

Low input capacitance: 1680pF @ 25V

High power dissipation: 120W

Product Advantages

Suitable for high-power, high-temperature applications

Efficient power switching and conversion

Compact DPAK surface mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±15V

On-Resistance (Rds(on)): 82mΩ @ 25A, 10V

Continuous Drain Current (Id): 27.5A @ 25°C

Input Capacitance (Ciss): 1680pF @ 25V

Power Dissipation (Pd): 120W

Quality and Safety Features

RoHS3 Compliant

DPAK package for reliable surface mount assembly

Compatibility

Suitable for various power electronics and control applications

Application Areas

Power supplies

Motor drives

Inverters

Converters

Product Lifecycle

Current product, no indication of discontinuation

Replacements and upgrades may be available from onsemi

Key Reasons to Choose

Excellent performance in high-power, high-temperature applications

Efficient switching and power conversion

Compact and reliable DPAK surface mount package

Wide operating temperature range and high power dissipation