Manufacturer Part Number
NTB30N20
Manufacturer
onsemi
Introduction
N-channel power MOSFET transistor
Product Features and Performance
High voltage rating up to 200V
Low on-resistance of 81mOhm at 15A, 10V
Capable of continuous drain current up to 30A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge of 100nC at 10V
Product Advantages
Excellent power handling capability
Efficient power conversion with low conduction losses
Robust design for high-temperature operation
Suitable for various power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
Maximum Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 81mOhm @ 15A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 2335pF @ 25V
Power Dissipation: 2W @ Ta, 214W @ Tc
Threshold Voltage (Vgs(th)): 4V @ 250A
Quality and Safety Features
RoHS non-compliant
DPAK (TO-263-3) surface-mount package
Compatibility
Compatible with various power electronics circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power amplifiers
Industrial and automotive electronics
Product Lifecycle
This product is an active and widely available MOSFET transistor
Replacement and upgrade options are readily available
Key Reasons to Choose This Product
Excellent power handling and efficiency performance
Wide operating temperature range for robust operation
Fast switching capabilities for high-frequency applications
Proven reliability and availability from a reputable manufacturer
Compatibility with common power electronics designs and systems
NTB27N06T4GAMI Semiconductor/onsemi