NTB35N15T4G - onsemi

Manufacturer Part Number

NTB35N15T4G

Manufacturer

onsemi

Introduction

N-Channel MOSFET transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 150V

Vgs (Max) of ±20V

Rds On (Max) of 50mOhm @ 18.5A, 10V

Continuous Drain Current (Id) of 37A @ 25°C

Input Capacitance (Ciss) of 3200pF @ 25V

Power Dissipation (Max) of 2W (Ta), 178W (Tj)

Gate Charge (Qg) of 100nC @ 10V

Product Advantages

Low on-resistance for high efficiency

High power handling capability

Suitable for high voltage and high current applications

Key Technical Parameters

MOSFET technology

N-Channel FET type

Vgs(th) (Max) of 4V @ 250A

Drive Voltage (Max Rds On, Min Rds On) of 10V

Operating Temperature range of -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

DPAK package for efficient heat dissipation

Compatibility

Surface mount package

Application Areas

Suitable for high voltage and high current power conversion and control applications

Product Lifecycle

Current product offering, no discontinuation or upgrade information available

Several Key Reasons to Choose This Product

High power handling capability

Low on-resistance for high efficiency

Wide operating temperature range

Compact DPAK package for efficient cooling