Manufacturer Part Number
NTB30N20T4G
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
High-voltage rating up to 200V
Low on-resistance of 81mOhm @ 15A, 10V
Continuous drain current of 30A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge of 100nC @ 10V
Suitable for various power management and switching applications
Product Advantages
Efficient power conversion and switching
Robust high-voltage handling capability
Low conduction losses and high thermal performance
Compact surface-mount DPAK package
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 81mOhm @ 15A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 2335pF @ 25V
Power Dissipation: 2W @ Ta, 214W @ Tc
Threshold Voltage (Vgs(th)): 4V @ 250A
Drive Voltage: 10V
Quality and Safety Features
Reliable and robust design
Complies with safety and environmental standards
Compatibility
Suitable for various power management, switching, and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Industrial and consumer electronics
Product Lifecycle
This is an active product, not nearing discontinuation
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
High-voltage and high-current handling capability
Excellent energy efficiency with low on-resistance
Compact and thermally efficient DPAK package
Wide operating temperature range for reliability
Fast switching and low gate charge for high-frequency applications
Proven quality and reliability from a trusted manufacturer