NTB30N20T4G - onsemi

Manufacturer Part Number

NTB30N20T4G

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET transistor

Product Features and Performance

High-voltage rating up to 200V

Low on-resistance of 81mOhm @ 15A, 10V

Continuous drain current of 30A at 25°C

Wide operating temperature range of -55°C to 175°C

Fast switching speed and low gate charge of 100nC @ 10V

Suitable for various power management and switching applications

Product Advantages

Efficient power conversion and switching

Robust high-voltage handling capability

Low conduction losses and high thermal performance

Compact surface-mount DPAK package

Key Technical Parameters

Drain-Source Voltage (Vdss): 200V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 81mOhm @ 15A, 10V

Continuous Drain Current (Id): 30A @ 25°C

Input Capacitance (Ciss): 2335pF @ 25V

Power Dissipation: 2W @ Ta, 214W @ Tc

Threshold Voltage (Vgs(th)): 4V @ 250A

Drive Voltage: 10V

Quality and Safety Features

Reliable and robust design

Complies with safety and environmental standards

Compatibility

Suitable for various power management, switching, and control applications

Application Areas

Power supplies

Motor drives

Inverters

Switch-mode power supplies

Industrial and consumer electronics

Product Lifecycle

This is an active product, not nearing discontinuation

Replacements and upgrades may be available from the manufacturer

Key Reasons to Choose This Product

High-voltage and high-current handling capability

Excellent energy efficiency with low on-resistance

Compact and thermally efficient DPAK package

Wide operating temperature range for reliability

Fast switching and low gate charge for high-frequency applications

Proven quality and reliability from a trusted manufacturer