Manufacturer Part Number
NTB25P06
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
60V Drain-Source Voltage
±15V Gate-Source Voltage
82mΩ On-Resistance @ 25A, 10V
5A Continuous Drain Current @ 25°C
1680pF Input Capacitance @ 25V
120W Power Dissipation
4V Gate Threshold Voltage @ 250A
50nC Gate Charge @ 10V
Product Advantages
High power handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range (-55°C to 175°C)
Suitable for various power management applications
Key Technical Parameters
Drain-Source Voltage: 60V
Gate-Source Voltage: ±15V
On-Resistance: 82mΩ @ 25A, 10V
Continuous Drain Current: 27.5A @ 25°C
Input Capacitance: 1680pF @ 25V
Power Dissipation: 120W
Gate Threshold Voltage: 4V @ 250A
Gate Charge: 50nC @ 10V
Quality and Safety Features
RoHS non-compliant
TO-263-3, DPak (2 Leads + Tab), TO-263AB package
Surface mount technology
Compatibility
Suitable for various power management applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Telecommunications equipment
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
High power handling and efficiency
Low on-resistance for improved performance
Wide operating temperature range
Suitable for a variety of power management applications
Surface mount packaging for ease of integration