Manufacturer Part Number
NTB18N06T4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET designed for power management and switching applications
Product Features and Performance
60V Drain-to-Source Voltage
90mΩ On-Resistance at 7.5A, 10V
15A Continuous Drain Current at 25°C
450pF Input Capacitance at 25V
4W Power Dissipation at Tc
-55°C to 175°C Operating Temperature Range
Product Advantages
Efficient power conversion and switching
Low on-resistance for low power loss
High current capability
Wide operating temperature range
Key Technical Parameters
Vdss: 60V
Vgs(max): ±20V
Rds(on)@7.5A, 10V: 90mΩ
Id@25°C: 15A
Ciss@25V: 450pF
Pd@Tc: 48.4W
Quality and Safety Features
Robust MOSFET technology
Reliable surface-mount packaging
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Power conversion circuits
Product Lifecycle
Current product, no discontinuation expected
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power efficiency and low power loss
High current capability for demanding applications
Wide operating temperature range for flexible design
Reliable and robust MOSFET construction
Compatibility with various power management and switching circuits