Manufacturer Part Number
NTB190N65S3HF
Manufacturer
onsemi
Introduction
High-voltage, high-performance N-channel MOSFET
Product Features and Performance
650V Drain-Source Voltage
190mΩ On-Resistance
20A Continuous Drain Current
Low Gate Charge of 34nC
Fast Switching Capability
Product Advantages
Excellent Energy Efficiency
High Power Density
Reliable Performance
Key Technical Parameters
650V Drain-Source Voltage
190mΩ On-Resistance
20A Continuous Drain Current
-55°C to 150°C Operating Temperature
1610pF Input Capacitance
162W Power Dissipation
Quality and Safety Features
RoHS3 Compliant
DPAK-3 (TO-263-3) Package
Compatibility
Applicable for a wide range of high-voltage, high-power applications
Application Areas
Power Supplies
Motor Drives
Inverters
Switching Regulators
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent energy efficiency and power density
Reliable and robust performance
Wide operating temperature range
Compact and space-saving DPAK-3 package
RoHS3 compliance for environmental friendliness