Manufacturer Part Number
NTB45N06T4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET in a surface mount DPAK package
Product Features and Performance
High drain-source breakdown voltage (60V)
Low on-resistance (26mΩ @ 22.5A, 10V)
High continuous drain current (45A @ 25°C)
Wide operating temperature range (-55°C to 175°C)
Fast switching speed
Low gate charge (46nC @ 10V)
High power dissipation (2.4W @ Ta, 125W @ Tj)
Product Advantages
Efficient power conversion and control
Compact surface mount DPAK package
Reliable performance across wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 26mΩ @ 22.5A, 10V
Continuous Drain Current (Id): 45A @ 25°C
Input Capacitance (Ciss): 1725pF @ 25V
Power Dissipation: 2.4W @ Ta, 125W @ Tj
Quality and Safety Features
RoHS3 compliant
Qualified for automotive and industrial applications
Compatibility
Suitable for a variety of power conversion and control applications
Application Areas
Switched-mode power supplies
Motor drives
Lighting and appliance controls
Industrial automation and control
Product Lifecycle
Current production part
No plans for discontinuation
Several Key Reasons to Choose This Product
High efficiency and power density
Reliable performance across wide temperature range
Compact surface mount package
Extensive application flexibility
Proven quality and safety for automotive and industrial use