Manufacturer Part Number
NTB52N10G
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 100V
Extremely low On-Resistance (Rds(on)) of 30mΩ @ 26A, 10V
Continuous Drain Current (Id) of 52A at 25°C
High input capacitance (Ciss) of 3150pF @ 25V
Supports wide temperature range of -55°C to 150°C
Surface mount DPAK package
Product Advantages
Excellent power efficiency and low heat generation
Reliable and robust performance
Compact and space-saving design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 30mΩ @ 26A, 10V
Continuous Drain Current (Id): 52A at 25°C
Input Capacitance (Ciss): 3150pF @ 25V
Power Dissipation: 2W (Ta), 178W (Tc)
Quality and Safety Features
Robust MOSFET technology
Operating temperature range of -55°C to 150°C
Complies with industry safety and quality standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Power amplifiers
Industrial automation equipment
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and low heat generation
Reliable and robust performance across a wide temperature range
Compact and space-saving surface mount DPAK package
Suitable for a variety of power electronics applications
Proven MOSFET technology with industry-standard quality and safety