NTB52N10T4G - onsemi

Manufacturer Part Number

NTB52N10T4G

Manufacturer

onsemi

Introduction

This product is a single N-channel MOSFET transistor designed for power management and control applications.

Product Features and Performance

100V Drain-Source Voltage (Vdss)

30mΩ maximum On-Resistance (Rds(on)) at 26A, 10V

52A maximum Continuous Drain Current (ID) at 25°C

3150pF maximum Input Capacitance (Ciss) at 25V

2W Power Dissipation at 25°C, 178W at case temperature

Wide Operating Temperature Range: -55°C to 150°C

Product Advantages

Excellent energy efficiency due to low on-resistance

High current handling capability

Reliable operation in harsh environments

Surface mount package for compact design

Key Technical Parameters

Vdss: 100V

Vgs(max): ±20V

Rds(on) @ Id, Vgs: 30mΩ @ 26A, 10V

Id(continuous) @ 25°C: 52A

Ciss @ Vds: 3150pF @ 25V

Power Dissipation: 2W (Ta), 178W (Tc)

Quality and Safety Features

Compliance with RoHS and other environmental regulations

ESD protection for reliable performance

Robust packaging for mechanical integrity

Compatibility

This MOSFET is suitable for use in a wide range of power management, control, and switching applications.

Application Areas

Switch-mode power supplies

Motor drives

Industrial automation and control

Automotive electronics

Product Lifecycle

This product is an active and widely available part. Suitable replacement or upgrade options are likely to be available from the manufacturer or alternative suppliers.

Key Reasons to Choose This Product

Excellent energy efficiency through low on-resistance

High current handling capability for demanding applications

Reliable operation in wide temperature ranges

Compact surface mount package for space-constrained designs

Availability and compatibility with a variety of power electronics applications