NSBC114YDP6T5G - onsemi

Manufacturer Part Number

NSBC114YDP6T5G

Manufacturer

onsemi

Introduction

The NSBC114YDP6T5G is a dual NPN pre-biased transistor array from onsemi, designed for use in various electronic applications.

Product Features and Performance

Provides two NPN pre-biased transistors in a single package

Offers a maximum power rating of 339mW

Features a collector-emitter breakdown voltage up to 50V

Supports a maximum collector current of 100mA

Exhibits a low collector-emitter saturation voltage of 250mV at 10mA collector current

Provides a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage

Includes base and emitter-base resistors with values of 10kΩ and 47kΩ, respectively

Product Advantages

Compact surface mount package (SOT-963)

Pre-biased configuration simplifies circuit design

Suitable for various electronic applications requiring dual NPN transistors

Key Technical Parameters

Power Rating: 339mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 10mA

DC Current Gain (hFE): 80 (Min) @ 5mA, 10V

Quality and Safety Features

RoHS3 compliant

Reliable surface mount package (SOT-963)

Compatibility

Suitable for use in a variety of electronic circuits and devices

Application Areas

Amplifiers

Switches

Biasing circuits

Logic gates

General-purpose electronic applications

Product Lifecycle

The NSBC114YDP6T5G is an active product, and there are no immediate plans for discontinuation.

Replacements or upgrades may be available in the future, but the specific details are not known at this time.

Key Reasons to Choose This Product

Pre-biased configuration simplifies circuit design

Compact surface mount package (SOT-963) for efficient board space utilization

Wide range of operating voltages and currents

Reliable performance and RoHS3 compliance

Suitable for various electronic applications requiring dual NPN transistors