NSBC114YDXV6T1G - onsemi

Manufacturer Part Number

NSBC114YDXV6T1G

Manufacturer

onsemi

Introduction

This product is a dual NPN pre-biased bipolar junction transistor (BJT) array in a small SOT-563 or SOT-666 surface mount package.

Product Features and Performance

Dual NPN pre-biased transistors

500mW power rating

50V collector-emitter breakdown voltage

100mA maximum collector current

500nA maximum collector cutoff current

250mV maximum collector-emitter saturation voltage

80 minimum DC current gain at 5mA, 10V

10kOhms base resistor, 47kOhms emitter-base resistor

Product Advantages

Small, space-saving surface mount package

Pre-biased for simplified circuit design

Reliable performance with key electrical specifications

Key Technical Parameters

Package: SOT-563, SOT-666

Power Rating: 500mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV

DC Current Gain (Min): 80

Base Resistor: 10kOhms

Emitter-Base Resistor: 47kOhms

Quality and Safety Features

RoHS3 compliant

Reliable surface mount packaging

Compatibility

This dual NPN pre-biased BJT array is compatible with various electronic circuit designs requiring a compact, integrated transistor solution.

Application Areas

Amplifier circuits

Switch and logic circuits

Biasing and level shifting

General-purpose electronics

Product Lifecycle

This product is currently in production and available for purchase. No discontinuation is expected in the near future.

Key Reasons to Choose This Product

Compact, space-saving surface mount package

Pre-biased transistors for simplified circuit design

Reliable electrical performance with key specifications

RoHS3 compliance for environmental sustainability

Compatibility with a wide range of electronic circuit applications