NSBC114YPDXV6T1G - onsemi

Manufacturer Part Number

NSBC114YPDXV6T1G

Manufacturer

onsemi

Introduction

The NSBC114YPDXV6T1G is a pre-biased bipolar junction transistor (BJT) array from onsemi. It features one NPN and one PNP transistor in a space-saving surface mount package.

Product Features and Performance

Dual pre-biased NPN and PNP transistors

Low collector-emitter saturation voltage

Low collector cutoff current

Wide collector-emitter breakdown voltage

High DC current gain

Integrated base and emitter resistors

Product Advantages

Compact surface mount package

Reduced component count

Optimized for space-constrained applications

Simplified circuit design

Key Technical Parameters

Collector-emitter breakdown voltage: 50V

Collector current (max): 100mA

Collector cutoff current (max): 500nA

Collector-emitter saturation voltage: 250mV @ 10mA

DC current gain: 80 @ 5mA, 10V

Base resistor: 10kΩ

Emitter-base resistor: 47kΩ

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Suitable for surface mount applications

Compatible with standard SMT assembly processes

Application Areas

Analog and digital circuit design

Sensor and signal conditioning

Logic and switch circuits

Power management

Consumer electronics

Product Lifecycle

The NSBC114YPDXV6T1G is an active product and there are no plans for discontinuation. Replacements and upgrades may be available from onsemi.

Key Reasons to Choose This Product

Compact and space-saving surface mount package

Integrated pre-biased NPN and PNP transistors for simplified circuit design

Wide collector-emitter breakdown voltage and low saturation voltage for improved performance

High DC current gain and low collector cutoff current for enhanced reliability

RoHS3 compliance and suitability for standard SMT assembly processes