NSBC114EPDXV6T1 - onsemi

Manufacturer Part Number

NSBC114EPDXV6T1

Manufacturer

onsemi

Introduction

This is a dual transistor array in a pre-biased configuration, featuring one NPN and one PNP transistor.

Product Features and Performance

Dual transistor array in a pre-biased configuration

One NPN and one PNP transistor

Low collector-emitter saturation voltage

Wide collector-emitter breakdown voltage

Low collector cutoff current

High DC current gain

Product Advantages

Compact surface mount package

Pre-biased configuration simplifies circuit design

Suitable for various amplifier and switching applications

Key Technical Parameters

Power Rating: 500mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 300μA, 10mA

Transistor Type: 1 NPN, 1 PNP Pre-Biased (Dual)

DC Current Gain (hFE): 35 @ 5mA, 10V

Base Resistor (R1): 10kOhms

Emitter-Base Resistor (R2): 10kOhms

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface mount package: SOT-563, SOT-666

Application Areas

Amplifier circuits

Switching circuits

Various electronic applications

Product Lifecycle

This product is currently available, but it is important to check with the manufacturer for the latest product information and availability.

Key Reasons to Choose This Product

Compact and efficient dual transistor array in a pre-biased configuration

Wide range of technical parameters suitable for various applications

Reliable performance and quality from a reputable manufacturer