NSBC114EDXV6T5G - onsemi

Manufacturer Part Number

NSBC114EDXV6T5G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors Bipolar (BJT) Arrays, Pre-Biased

Product Features and Performance

2 NPN Pre-Biased (Dual) Transistors

Power Max: 500mW

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V

Resistor Base (R1): 10kOhms

Resistor Emitter Base (R2): 10kOhms

Product Advantages

Compact surface mount package

Pre-biased transistors for simplified circuit design

Suitable for a wide range of applications

Key Technical Parameters

RoHS: ROHS3 Compliant

Manufacturer's packaging: SOT-563

Mounting Type: Surface Mount

Package / Case: SOT-563, SOT-666

Supplier Device Package: SOT-563

Package: Tape & Reel (TR)

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Compatibility

Suitable for a wide range of applications

Application Areas

General purpose amplifier and switching applications

Biasing and pull-up circuits

Logic gates and interfaces

Product Lifecycle

Current production, no discontinuation planned

Several Key Reasons to Choose This Product

Compact surface mount package for space-constrained designs

Pre-biased transistors simplify circuit design

Suitable for a wide range of general-purpose electronic applications

Meets RoHS3 environmental compliance requirements

Readily available in tape and reel packaging