NSBC114EDXV6T1G - onsemi

Manufacturer Part Number

NSBC114EDXV6T1G

Manufacturer

onsemi

Introduction

The NSBC114EDXV6T1G is a dual NPN pre-biased bipolar junction transistor (BJT) array in a surface-mount SOT-563 package.

Product Features and Performance

Dual NPN pre-biased transistors

Max power dissipation of 500mW

Collector-emitter breakdown voltage of up to 50V

Collector current of up to 100mA

Collector cutoff current of up to 500nA

Low VCE saturation voltage of 250mV @ 10mA collector current

DC current gain (hFE) of at least 35 @ 5mA collector current and 10V collector-emitter voltage

Internal 10kOhm base and emitter-base resistors

Product Advantages

Space-saving surface-mount package

Pre-biased for simplified circuit design

Robust electrical characteristics for reliable operation

Key Technical Parameters

Power dissipation: 500mW

Collector-emitter breakdown voltage: 50V

Collector current: 100mA

Collector cutoff current: 500nA

VCE saturation voltage: 250mV @ 10mA

DC current gain (hFE): 35 min @ 5mA, 10V

Base and emitter-base resistors: 10kOhms

Quality and Safety Features

RoHS3 compliant

Packaged in tape and reel for automated assembly

Compatibility

Surface-mount SOT-563 package

Application Areas

General-purpose amplification and switching

Logic-level and low-power applications

Product Lifecycle

Currently available, no discontinuation planned.

Key Reasons to Choose This Product

Space-efficient surface-mount package

Simplified circuit design with pre-biased transistors

Reliable electrical performance within the specified parameters

RoHS3 compliance for environmentally-conscious applications