NSBC114EPDXV6T1G - onsemi

Manufacturer Part Number

NSBC114EPDXV6T1G

Manufacturer

onsemi

Introduction

The NSBC114EPDXV6T1G is a pre-biased dual bipolar junction transistor (BJT) array in a SOT-563 surface mount package.

Product Features and Performance

Dual NPN and PNP transistors in a single package

Pre-biased configuration with integrated resistors

Low collector-emitter saturation voltage

High collector-emitter breakdown voltage

Low collector cutoff current

Wide range of DC current gain

Product Advantages

Compact size for space-constrained applications

Integrated resistors simplify circuit design

Improved reliability and performance compared to discrete transistors

Suitable for a variety of analog and digital circuit applications

Key Technical Parameters

Power rating: 500mW

Collector-emitter breakdown voltage: 50V

Collector current: 100mA

Collector cutoff current: 500nA

Collector-emitter saturation voltage: 250mV @ 10mA

DC current gain: 35 @ 5mA, 10V

Integrated base and emitter-base resistors: 10kOhms

Quality and Safety Features

RoHS3 compliant

Suitable for lead-free soldering processes

Compatibility

Compatible with standard surface mount assembly processes

Suitable for use in a variety of electronic circuits and applications

Application Areas

Analog and digital circuit design

Amplifier circuits

Switching circuits

Power supplies

Industrial automation and control systems

Product Lifecycle

Current production part, not nearing discontinuation

Replacement or upgrade parts available if needed

Key Reasons to Choose This Product

Compact and space-saving design

Integrated pre-biased configuration for simplified circuit design

Excellent electrical characteristics and performance

Reliable and robust construction for long-term use

Compatibility with standard manufacturing processes

Suitable for a wide range of electronic circuit applications