NDUL03N150CG - onsemi

Manufacturer Part Number

NDUL03N150CG

Manufacturer

onsemi

Introduction

High-voltage, N-channel MOSFET transistor

Product Features and Performance

Capable of handling high drain-to-source voltage up to 1500 V

Low on-resistance of 10.5 Ω @ 1.25 A, 10 V

Continuous drain current of 2.5 A at 25°C ambient temperature

High input capacitance of 650 pF @ 30 V

Maximum power dissipation of 3 W at 25°C ambient temperature, 50 W at case temperature

Product Advantages

Suitable for high-voltage, high-power applications

Compact TO-3P(L) package allows for efficient heat dissipation

N-channel MOSFET design offers fast switching and low power consumption

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1500 V

Gate-to-Source Voltage (Vgs): ±30 V

On-Resistance (Rds(on)): 10.5 Ω @ 1.25 A, 10 V

Continuous Drain Current (Id): 2.5 A @ 25°C

Input Capacitance (Ciss): 650 pF @ 30 V

Power Dissipation: 3 W @ 25°C, 50 W @ case temperature

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Through-hole mounting in TO-3P(L) package

Application Areas

High-voltage, high-power switching applications

Power supplies, motor drives, and industrial control systems

Product Lifecycle

This product is currently in production and widely available

No discontinuation or replacement plans announced

Key Reasons to Choose This Product

Capable of handling high voltages up to 1500 V

Low on-resistance and high current handling for efficient power conversion

Compact and thermally efficient TO-3P(L) package

Suitable for a wide range of high-voltage, high-power applications

Manufactured to high quality and safety standards