Manufacturer Part Number
SQ4431EY-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET power MOSFET suitable for automotive and industrial applications.
Product Features and Performance
30V Drain-Source Voltage
8A Continuous Drain Current
30mΩ On-Resistance
Wide Operating Temperature Range: -55°C to 175°C
Low Gate Charge: 25nC
Low Input Capacitance: 1265pF
6W Power Dissipation
Product Advantages
Excellent RDS(on) performance
Robust design for automotive and industrial use
Optimized for high-efficiency power conversion
Compact 8-SOIC surface-mount package
Key Technical Parameters
MOSFET Technology: TrenchFET
Package: 8-SOIC
Drain-Source Voltage (VDS): 30V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 30mΩ @ 6A, 10V
Continuous Drain Current (ID): 10.8A
Quality and Safety Features
ROHS3 Compliant
AEC-Q101 qualified for automotive applications
Meets stringent quality and reliability standards
Compatibility
Suitable for a wide range of automotive and industrial power management applications
Application Areas
Power supplies
Motor drives
Battery chargers
Industrial automation and control
Product Lifecycle
This product is currently in active production and availability.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent performance and efficiency characteristics
Robust design for demanding automotive and industrial environments
Compact 8-SOIC surface-mount package for space-constrained applications
Extensive qualification and compliance with industry standards
Broad compatibility and suitability for a wide range of power management applications
SQ4532101K3B-DE2ABC