Manufacturer Part Number
NVMFS4C05NT1G
Manufacturer
onsemi
Introduction
High-performance and energy-efficient N-channel MOSFET device
Product Features and Performance
30V drain-source voltage
Low on-resistance of 3.4mOhm
High continuous drain current of 24.7A at 25°C ambient temperature
Wide operating temperature range of -55°C to 175°C
Low gate charge of 30nC at 10V
High power dissipation of 3.61W at 25°C ambient temperature and 79W at 25°C case temperature
Product Advantages
Excellent performance in terms of low on-resistance, high current capability, and low gate charge
Suitable for use in high-power, high-efficiency applications
Automotive-qualified to AEC-Q101 standard
Key Technical Parameters
Drain-source voltage (Vdss): 30V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.4mOhm
Continuous drain current (Id): 24.7A at 25°C ambient, 116A at 25°C case
Input capacitance (Ciss): 1972pF at 15V
Power dissipation: 3.61W at 25°C ambient, 79W at 25°C case
Quality and Safety Features
RoHS3 compliant
Automotive-qualified to AEC-Q101 standard
Compatibility
Surface mount package (5-DFN 5x6, 8-SOFL)
Suitable for use in automotive and industrial applications
Application Areas
Automotive electronics (e.g., motor drives, power management)
Industrial power conversion and control systems
General high-power, high-efficiency applications
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent performance characteristics (low on-resistance, high current, low gate charge)
Automotive qualification and suitability for high-power, high-efficiency applications
Broad operating temperature range and high power dissipation capabilities
Surface mount package and compatibility with various applications
