Manufacturer Part Number
NVMFS4C05NT3G
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET designed for automotive and industrial applications
Product Features and Performance
Robust and reliable design for demanding applications
Excellent on-state resistance (R_DS(on)) for high efficiency
High avalanche capability and rugged performance
Very low gate charge for fast switching
Product Advantages
Optimized for low power loss and high efficiency
Suitable for high-frequency switching applications
Excellent thermal performance and high power density
Robust and reliable design for harsh environments
Key Technical Parameters
Drain-Source Voltage (V_DS): 30 V
Gate-Source Voltage (V_GS): ±20 V
On-State Resistance (R_DS(on)): 3.4 mΩ @ 30 A, 10 V
Continuous Drain Current (I_D): 24.7 A (Ta), 116 A (Tc)
Input Capacitance (C_iss): 1972 pF @ 15 V
Power Dissipation (P_D): 3.61 W (Ta), 79 W (Tc)
Threshold Voltage (V_GS(th)): 2.2 V @ 250 A
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Robust design for high reliability and long lifetime
Compatibility
Surface mount package (8-PowerTDFN, 5 Leads)
Suitable for high-frequency and high-power applications
Application Areas
Automotive systems (e.g., motor drives, power converters)
Industrial equipment (e.g., power supplies, inverters)
Telecommunications and server power systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Excellent efficiency and low power loss
Robust and reliable design for harsh environments
Suitable for high-frequency and high-power applications
Automotive and industrial grade quality and safety features
Broad compatibility and application versatility