Manufacturer Part Number
MUN5114DW1T1G
Manufacturer
onsemi
Introduction
The MUN5114DW1T1G is a pair of pre-biased PNP bipolar junction transistors (BJTs) in a 6-pin TSSOP/SC-88/SOT-363 package.
Product Features and Performance
Two pre-biased PNP transistors in a single package
Optimized for low-noise, low-power analog and digital applications
Collector-Emitter breakdown voltage of 50V
Collector current up to 100mA
Low collector-emitter saturation voltage of 250mV @ 10mA
Product Advantages
Space-saving 6-pin TSSOP/SC-88/SOT-363 package
Pre-biased configuration simplifies circuit design
Excellent noise performance for analog applications
Suitable for a wide range of low-power electronic devices
Key Technical Parameters
Power rating: 250mW
Collector-Emitter breakdown voltage: 50V
Collector current (max): 100mA
Collector cutoff current: 500nA
DC current gain (hFE): 80 minimum @ 5mA, 10V
Base resistance (R1): 10kOhms
Emitter-base resistance (R2): 47kOhms
Quality and Safety Features
RoHS3 compliant
Reliable performance in various operating conditions
Compatibility
The MUN5114DW1T1G is compatible with a wide range of electronic devices and circuits that require low-power, low-noise PNP transistors.
Application Areas
Analog and digital circuits
Low-power amplifiers and switches
Battery-powered devices
Consumer electronics
Product Lifecycle
The MUN5114DW1T1G is an active product, and onsemi continues to support and manufacture this device. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Space-efficient 6-pin TSSOP/SC-88/SOT-363 package
Pre-biased configuration for simplified circuit design
Excellent noise performance for analog applications
Wide operating voltage and current range
RoHS3 compliance for environmental responsibility
Reliable and long-lasting performance in various applications