MUN5114T1G - onsemi

Manufacturer Part Number

MUN5114T1G

Manufacturer

onsemi

Introduction

The MUN5114T1G is a PNP pre-biased bipolar junction transistor (BJT) in a small SC-70 (SOT-323) surface-mount package.

Product Features and Performance

Low collector-emitter saturation voltage

High DC current gain

Internal base and emitter resistors for pre-biasing

Low collector cutoff current

Suitable for switching and amplifier applications

Product Advantages

Compact surface-mount package

Integrated base and emitter resistors simplify design

Reliable performance in a wide range of applications

Key Technical Parameters

Power Rating: 202 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Base-Emitter Resistor: 10 kΩ

Emitter-Base Resistor: 47 kΩ

Quality and Safety Features

RoHS3 compliant

Reliable performance in a wide temperature range

Compatibility

Suitable for surface-mount assembly

Application Areas

Switching circuits

Amplifier circuits

General-purpose electronic applications

Product Lifecycle

Currently in active production

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

Compact, surface-mount packaging

Integrated biasing resistors for simple design

Reliable performance with low saturation voltage and high current gain

Wide operating voltage and current range

RoHS compliance for environmental safety