MUN5112T1G - onsemi

Manufacturer Part Number

MUN5112T1G

Manufacturer

onsemi

Introduction

The MUN5112T1G is a pre-biased PNP bipolar junction transistor (BJT) in a surface mount SC-70-3 (SOT323) package.

Product Features and Performance

Power rating of 202 mW

Collector-emitter breakdown voltage of 50 V

Collector current (max) of 100 mA

Collector cutoff current (max) of 500 nA

Collector-emitter saturation voltage of 250 mV @ 300 μA, 10 mA

DC current gain (hFE) of 60 min @ 5 mA, 10 V

Internal base and emitter resistors of 22 kΩ

Product Advantages

Pre-biased design for simplified biasing

Small surface mount package

Suitable for a variety of low-power analog and switching applications

Key Technical Parameters

Power Rating: 202 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE): 60 min @ 5 mA, 10 V

Internal Base and Emitter Resistors: 22 kΩ

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount SC-70-3 (SOT323) package

Application Areas

Suitable for a variety of low-power analog and switching applications

Product Lifecycle

Current production

Replacements and upgrades may be available

Several Key Reasons to Choose This Product

Pre-biased design for simplified biasing

Small surface mount package

Suitable for a variety of low-power analog and switching applications

RoHS3 compliant