MUN5111DW1T1G - onsemi

Manufacturer Part Number

MUN5111DW1T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Array, Pre-Biased

Product Features and Performance

2 PNP Pre-Biased Transistors

Collector-Emitter Breakdown Voltage: 50V (Max)

Collector Current: 100mA (Max)

Collector Cutoff Current: 500nA (Max)

VCE Saturation Voltage: 250mV @ 300μA, 10mA

DC Current Gain (hFE): 35 (Min) @ 5mA, 10V

Product Advantages

Pre-Biased for simplified biasing

Space-saving 6-pin SC-88/SOT-363 surface mount package

High breakdown voltage and low saturation voltage

Key Technical Parameters

Power Dissipation: 250mW

Resistor Values: 10kΩ (Base), 10kΩ (Emitter-Base)

RoHS3 Compliant

Quality and Safety Features

Designed and manufactured to high quality standards

Robust construction for reliable performance

Compatibility

Surface mount package compatible with common PCB assembly processes

Application Areas

Analog and digital circuits

Switching applications

Biasing networks

Product Lifecycle

Currently in production

Replacement parts and upgrades available

Key Reasons to Choose This Product

Compact, space-saving package

Simplified biasing with pre-biased design

Reliable performance with high voltage and current ratings

Suitable for a wide range of analog and digital circuit applications