MUN5111T1G - onsemi

Manufacturer Part Number

MUN5111T1G

Manufacturer

onsemi

Introduction

Single pre-biased PNP bipolar junction transistor (BJT)

Product Features and Performance

Optimized for switching and amplification applications

Low collector-emitter saturation voltage

High collector-emitter breakdown voltage

Low collector cutoff current

Stable current gain over operating temperature range

Product Advantages

Compact surface mount package

Pre-biased design simplifies circuit design

Suitable for high-volume, cost-sensitive applications

Key Technical Parameters

Power Rating: 202 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 10 mA

DC Current Gain (hFE): 35 min @ 5 mA, 10 V

Base Resistor (R1): 10 kΩ

Emitter-Base Resistor (R2): 10 kΩ

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Surface mount SC-70, SOT-323 package

Application Areas

Switching and amplification circuits

Biasing and level shifting applications

General-purpose electronics

Product Lifecycle

Currently in production

Replacement and upgrade options available

Key Reasons to Choose This Product

Optimized performance for switching and amplification

Compact surface mount package for space-constrained designs

Pre-biased design simplifies circuit implementation

Stable electrical characteristics across operating temperature range

RoHS3 compliance for environmentally-conscious applications