MUN5113T1G - onsemi

Manufacturer Part Number

MUN5113T1G

Manufacturer

onsemi

Introduction

The MUN5113T1G is a PNP bipolar junction transistor (BJT) with a pre-biased base-emitter junction, suitable for use in various electronic circuits.

Product Features and Performance

Pre-biased base-emitter junction

Collector-emitter breakdown voltage up to 50V

Collector current up to 100mA

Low collector-emitter saturation voltage

Integrated base and emitter resistors

Product Advantages

Simplifies circuit design by providing pre-biased transistor

Compact surface mount package

Reliable performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 50V

Collector Current: 100mA

Collector Cutoff Current: 500nA

Base-Emitter Saturation Voltage: 250mV

DC Current Gain: 80

Base Resistor: 47kΩ

Emitter-Base Resistor: 47kΩ

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Surface mount SC-70 (SOT-323) package

Application Areas

Amplifier circuits

Switch circuits

Logic gates

Pull-up resistor applications

Product Lifecycle

This product is currently in production and available.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Simplified circuit design with pre-biased transistor

Compact surface mount package

Reliable performance with high breakdown voltage and current rating

Integrated resistors for easy implementation

RoHS3 compliance for environmental considerations