MUN5116DW1T1G - onsemi

Manufacturer Part Number

MUN5116DW1T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Product Features and Performance

2 PNP Pre-Biased (Dual) transistors

250mW maximum power

50V maximum collector-emitter breakdown voltage

100mA maximum collector current

500nA maximum collector cutoff current

250mV maximum collector-emitter saturation voltage at 1mA, 10mA

160 minimum DC current gain at 5mA, 10V

7kOhms base resistor

Product Advantages

Pre-biased configuration for easy use

Space-saving SC-88/SC70-6/SOT-363 surface mount package

RoHS compliance for environmental responsibility

Key Technical Parameters

Power Max: 250mW

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA

Transistor Type: 2 PNP Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V

Resistor Base (R1): 4.7kOhms

Quality and Safety Features

RoHS3 compliant for environmental safety

Compatibility

Suitable for a wide range of electronic circuit applications

Application Areas

General-purpose electronic circuits

Amplifiers

Switches

Biasing networks

Product Lifecycle

This product is actively available and not nearing discontinuation.

Replacements and upgrades may be available from the manufacturer.

Key Reasons to Choose This Product

Pre-biased configuration for easy use in electronic circuits

Compact surface mount package for space-saving designs

Reliable performance with key technical specifications

RoHS compliance for environmentally-conscious applications

Wide compatibility and suitability for various electronic circuits