MJD32CTF - onsemi

Manufacturer Part Number

MJD32CTF

Manufacturer

onsemi

Introduction

PNP bipolar junction transistor

Product Features and Performance

High power handling capability

Low collector-emitter saturation voltage

High DC current gain

High transition frequency

Product Advantages

Suitable for high-power switching and amplification applications

Reliable performance under high-temperature conditions

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100 V

Current Collector (Ic) (Max): 3 A

Current Collector Cutoff (Max): 50 A

Vce Saturation (Max) @ Ib, Ic: 1.2 V @ 375 mA, 3 A

DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3 A, 4 V

Frequency Transition: 3 MHz

Quality and Safety Features

Operating Temperature: 150°C (TJ)

Power Max: 1.56 W

Meets high-reliability requirements

Compatibility

TO-252-3, DPak (2 Leads + Tab), SC-63 package

Surface mount configuration

Application Areas

High-power switching and amplification circuits

Power supplies

Motor control

Industrial and automotive electronics

Product Lifecycle

This product is currently in active production

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

High power handling and thermal capability

Low saturation voltage for efficient operation

High current gain and transition frequency for high-speed performance

Reliable surface mount package for ease of integration

Suitable for a wide range of high-power electronic applications