MJD32T4G - onsemi

Manufacturer Part Number

MJD32T4G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single Bipolar Junction Transistor (BJT), PNP type

Product Features and Performance

Power Rating: 1.56 W

Collector-Emitter Breakdown Voltage: 40 V (max)

Collector Current: 3 A (max)

Collector Cutoff Current: 50 A (max)

Collector-Emitter Saturation Voltage: 1.2 V @ 375 mA, 3 A

DC Current Gain (hFE): 10 (min) @ 3 A, 4 V

Transition Frequency: 3 MHz

Product Advantages

Suitable for high-power, high-current switching and amplifier applications

Robust design for reliable performance

Key Technical Parameters

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type: Surface Mount

Operating Temperature: -65°C to 150°C

Quality and Safety Features

RoHS3 Compliant

Compatibility

Can be used in various electronic circuits and systems that require a high-power, high-current PNP transistor

Application Areas

Power supplies

Motor control

Switching circuits

Amplifier circuits

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

Robust and reliable performance

Suitable for high-power, high-current applications

Compact surface mount package

RoHS3 compliance for environmental safety