MJD340RLG - onsemi

Manufacturer Part Number

MJD340RLG

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single Transistor

Product Features and Performance

High Power Handling Capability: 15 W

High Voltage Capability: 300 V Collector-Emitter Breakdown Voltage

High Current Capability: 500 mA Collector Current (Max)

High Current Gain: 30 (Min) at 50 mA, 10 V

High Frequency: 10 MHz Transition Frequency

Product Advantages

Suitable for High Power, High Voltage, and High Frequency Applications

Compact Surface Mount DPAK Package

Wide Operating Temperature Range: -65°C to 150°C

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 300 V (Max)

Collector Current: 500 mA (Max)

Collector Cutoff Current: 100 μA (Max)

DC Current Gain: 30 (Min) at 50 mA, 10 V

Transition Frequency: 10 MHz

Quality and Safety Features

ROHS3 Compliant

Reliable Performance in Wide Temperature Range

Compatibility

Suitable for various high power, high voltage, and high frequency electronic applications

Application Areas

Power Amplifiers

Switching Regulators

Motor Drivers

Industrial Controls

RF Power Amplifiers

Product Lifecycle

Currently in production

No immediate plans for discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High power handling capability

Wide voltage and current operating range

Compact surface mount package

Suitable for high frequency applications

Reliable performance in wide temperature conditions

RoHS compliance for environmental safety