MJD340T4G - onsemi

Manufacturer Part Number

MJD340T4G

Manufacturer

onsemi

Introduction

High voltage, high power NPN silicon power transistor

Product Features and Performance

Capable of operating at high voltages up to 300V

Rated for high power up to 15W

Wide operating temperature range of -65°C to 150°C

High current capacity up to 500mA

High current gain (hFE) of at least 30 @ 50mA, 10V

Relatively high transition frequency of 10MHz

Product Advantages

Suitable for high voltage, high power applications

Able to withstand harsh environmental conditions

Provides a good balance of power handling and high frequency performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 300V

Collector Current (Max): 500mA

Collector Cutoff Current (Max): 100A

DC Current Gain (hFE): Min 30 @ 50mA, 10V

Transition Frequency: 10MHz

Quality and Safety Features

RoHS3 compliant

DPAK package provides good thermal dissipation

Compatibility

Surface mount packaging (DPAK)

Suitable for a variety of high voltage, high power electronic designs

Application Areas

Power amplifiers

Switching regulators

Motor drives

Industrial controls

Product Lifecycle

This is an active, in-production part from onsemi

Replacements and upgrades may be available in the future

Key Reasons to Choose

Ability to handle high voltages up to 300V

High power rating up to 15W

Wide operating temperature range

Good current handling and frequency performance

Proven reliability and quality from onsemi