MJD350-13 - Diodes Incorporated

Manufacturer Part Number

MJD350-13

Manufacturer

Diodes Incorporated

Introduction

High-power PNP bipolar junction transistor (BJT)

Designed for a variety of power applications

Product Features and Performance

High collector-emitter breakdown voltage of 300V

High collector current rating of 500mA

Wide operating temperature range of -55°C to 150°C

Low collector-emitter saturation voltage

Efficient power dissipation of up to 15W

Product Advantages

Robust and reliable performance

Suitable for high-voltage, high-current applications

Compact TO-252-3 (D-Pak) surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 300V

Collector Current (IC): 500mA

Power Dissipation: 15W

DC Current Gain (hFE): Minimum of 30 @ 50mA, 10V

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power electronics and control applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial controls

Product Lifecycle

This product is currently in production and not nearing discontinuation

Replacement or upgrade options are available if needed

Key Reasons to Choose This Product

Reliable and robust performance in high-power, high-voltage applications

Compact surface mount package for efficient board layout

Wide operating temperature range for use in demanding environments

Efficient power handling capability up to 15W

Compliance with RoHS3 standards for environmental responsibility