Manufacturer Part Number
MJD350T4G
Manufacturer
onsemi
Introduction
High voltage PNP bipolar junction transistor (BJT)
Suitable for use in a variety of power electronics applications
Product Features and Performance
Power rating of 15 W
Collector-emitter breakdown voltage of 300 V
Collector current (maximum) of 500 mA
Collector cutoff current (maximum) of 100 A
DC current gain (hFE) of 30 min. @ 50 mA, 10 V
Product Advantages
Robust and reliable performance
High voltage and power handling capabilities
Compact DPAK surface mount package
Key Technical Parameters
Operating temperature range of -65°C to 150°C
RoHS3 compliant
DPAK package with 2 leads + tab
Quality and Safety Features
Designed and manufactured to high quality standards
Robust and reliable construction
Compliant with relevant safety regulations
Compatibility
Suitable for use in a wide range of power electronics applications
Can be used as a replacement or upgrade for similar transistor products
Application Areas
Power supplies
Motor drives
Switching circuits
Audio amplifiers
Industrial control systems
Product Lifecycle
Currently in active production
Replacement or upgraded products may be available in the future
Key Reasons to Choose This Product
High voltage and power handling capabilities
Robust and reliable performance
Compact and efficient DPAK package
Compliance with relevant quality and safety standards
Suitability for a wide range of power electronics applications