MJD340T4 - onsemi

Manufacturer Part Number

MJD340T4

Manufacturer

onsemi

Introduction

High voltage, high power NPN bipolar junction transistor (BJT)

Product Features and Performance

Wide operating temperature range of -65°C to 150°C

High collector-emitter breakdown voltage of 300V

High collector current capability of 500mA

High collector cutoff current of 100A

Moderate DC current gain (hFE) of 30 @ 50mA, 10V

Surface mount (DPAK) package

Product Advantages

Suitable for high voltage, high power switching and amplifier applications

Robust design for reliable performance in harsh environments

Compact surface mount package for efficient board space utilization

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 300V

Current Collector (Ic) (Max): 500mA

Current Collector Cutoff (Max): 100A

DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V

Power Max: 15W

Operating Temperature: -65°C to 150°C

Quality and Safety Features

RoHS non-compliant

DPAK package for reliable thermal management

Compatibility

Surface mount (DPAK) package compatible with standard SMT assembly processes

Application Areas

High voltage, high power switching and amplifier circuits

Industrial and automotive electronics

Power supplies and motor control systems

Product Lifecycle

This product is an active and ongoing part of onsemi's discrete semiconductor portfolio, with no plans for discontinuation.

Replacement or upgrade options may be available from onsemi as technology evolves.

Key Reasons to Choose This Product

High voltage and current handling capability for demanding applications

Robust design and wide operating temperature range for reliable performance

Compact surface mount package for efficient board space utilization

Ongoing product availability and potential for future upgrades from onsemi