Manufacturer Part Number
MJD32CT4-A
Manufacturer
STMicroelectronics
Introduction
High-voltage, High-power PNP Bipolar Power Transistor
Product Features and Performance
High voltage capability up to 100V
High current handling up to 3A
High power dissipation up to 15W
Low saturation voltage for efficient power switching
High DC current gain (hFE) of 10 or more at 3A collector current
Suitable for various power supply, motor control, and amplifier applications
Product Advantages
Robust and reliable performance
Efficient power handling
Compact and space-saving DPAK package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 100V
Collector Current (IC): 3A
Power Dissipation (PD): 15W
Collector-Emitter Saturation Voltage (VCE(sat)): 1.2V @ 3A, 375mA
DC Current Gain (hFE): 10 min @ 3A, 4V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for surface mount assembly
Available in Tape and Reel packaging
Application Areas
Power supplies
Motor control
Audio amplifiers
Industrial electronics
Product Lifecycle
This product is an active and widely used device
Replacement or upgrade options are available from STMicroelectronics and other manufacturers
Key Reasons to Choose This Product
High voltage and current handling capability
Efficient power switching performance
Compact and space-saving DPAK package
Reliable and robust design for industrial applications
RoHS3 compliance for environmental responsibility