MJD32CT4 - STMicroelectronics

Manufacturer Part Number

MJD32CT4

Manufacturer

STMicroelectronics

Introduction

High-power bipolar junction transistor (BJT) in surface-mount DPAK package

Designed for high-current switching and power amplification applications

Product Features and Performance

Maximum collector-emitter voltage: 100V

Maximum collector current: 3A

Maximum power dissipation: 15W

Operating temperature range: -55°C to +150°C

High current gain: min. 10 @ 3A, 4V

Low collector-emitter saturation voltage: max. 1.2V @ 375mA, 3A

Product Advantages

Rugged and reliable construction

Efficient heat dissipation due to DPAK package

Suitable for high-current, high-power applications

RoHS3 compliant

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 100V

Collector Current (Max): 3A

Power Dissipation: 15W

Operating Temperature Range: -55°C to +150°C

Current Gain (hFE): min. 10 @ 3A, 4V

Collector-Emitter Saturation Voltage: max. 1.2V @ 375mA, 3A

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for a wide range of high-power, high-current electronic circuits and applications

Application Areas

Power amplifiers

Motor drives

Switching regulators

Power supplies

Industrial controls

Automotive electronics

Product Lifecycle

Current production model, no discontinuation planned

Replacement and upgrade options available

Key Reasons to Choose This Product

High power handling capability (15W)

Excellent current gain and low saturation voltage

Rugged and reliable DPAK package

Wide operating temperature range (-55°C to +150°C)

RoHS3 compliance for environmental friendliness

Suitable for a variety of high-power, high-current applications