MJD32CT4G - onsemi

Manufacturer Part Number

MJD32CT4G

Manufacturer

onsemi

Introduction

High-power PNP bipolar junction transistor (BJT)

Designed for high-current switching and amplification applications

Product Features and Performance

High collector-emitter breakdown voltage (VCEO) of 100V

High collector current (IC) capability of 3A

High collector-emitter saturation voltage (VCE(SAT)) of 1.2V @ 3A, 375mA

High current gain (hFE) of 10 @ 3A, 4V

Wide operating temperature range of -65°C to 150°C

3MHz transition frequency (fT)

56W maximum power dissipation

Product Advantages

Excellent power-handling capability

High voltage and current ratings

Optimized for high-current switching and amplification

Compact DPAK surface-mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 100V

Collector Current (IC): 3A

Collector-Emitter Saturation Voltage (VCE(SAT)): 1.2V @ 3A, 375mA

Current Gain (hFE): 10 @ 3A, 4V

Transition Frequency (fT): 3MHz

Power Dissipation: 1.56W

Quality and Safety Features

ROHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with a wide range of electronic circuits and systems that require high-power PNP bipolar transistors

Application Areas

High-current switching and amplification circuits

Power supplies

Motor drives

Audio amplifiers

Industrial and consumer electronics

Product Lifecycle

Currently in production

No plans for discontinuation

Several Key Reasons to Choose This Product

Excellent power-handling capability with high voltage and current ratings

Optimized for high-current switching and amplification applications

Compact and efficient DPAK surface-mount package

Wide operating temperature range and high reliability

Suitable for a variety of industrial and consumer electronics applications