MJD32CRLG - onsemi

Manufacturer Part Number

MJD32CRLG

Manufacturer

onsemi

Introduction

The MJD32CRLG is a PNP bipolar junction transistor (BJT) from onsemi, designed for a variety of power applications.

Product Features and Performance

Power rating of 1.56W

Collector-Emitter Breakdown Voltage up to 100V

Collector Current (Ic) up to 3A

Collector Cutoff Current (Ic) up to 50A

Low Collector-Emitter Saturation Voltage (Vce Sat) of 1.2V @ 3A, 375mA

DC Current Gain (hFE) of 10 minimum @ 3A, 4V

Transition Frequency of 3MHz

Product Advantages

Excellent power handling capabilities

High voltage and current ratings

Low saturation voltage for efficient operation

Suitable for high-frequency applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100V

Current Collector (Ic) (Max): 3A

Current Collector Cutoff (Max): 50A

Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A

Transistor Type: PNP

DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V

Frequency Transition: 3MHz

Quality and Safety Features

ROHS3 compliant

Housed in a DPAK (TO-252-3) package for surface mount applications

Compatibility

Suitable for a variety of power electronic applications

Application Areas

Power supplies

Motor drivers

Inverters

Amplifiers

Switching regulators

Product Lifecycle

The MJD32CRLG is an active product and there are no plans for discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

Excellent power handling capabilities with high voltage and current ratings

Low saturation voltage for efficient operation

Suitable for high-frequency applications

Compact DPAK surface mount package

RoHS3 compliant for environmental safety