Manufacturer Part Number
FQD8P10TM
Manufacturer
onsemi
Introduction
High-performance P-channel enhancement-mode power MOSFET
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed
Low gate charge for high-speed switching
Product Advantages
Suitable for high-power applications
Excellent thermal performance
High reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30 V
Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3 A, 10 V
Current Continuous Drain (Id) @ 25°C: 6.6 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Power Dissipation (Max): 2.5 W (Ta), 44 W (Tc)
Vgs(th) (Max) @ Id: 4 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Compatible with various electronic circuit designs
Application Areas
Suitable for high-power applications, such as DC-DC converters, motor drives, and power supplies
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available in the future.
Several Key Reasons to Choose This Product
Excellent thermal performance and high reliability for demanding applications
Low on-resistance and fast switching speed for high efficiency
Wide operating temperature range (-55°C to 150°C)
RoHS3 compliance and AEC-Q101 qualification for quality and safety