FQD9N25TM - onsemi

Manufacturer Part Number

FQD9N25TM

Manufacturer

onsemi

Introduction

High performance N-Channel MOSFET transistor

Product Features and Performance

250V Drain-Source Voltage

Continuous Drain Current up to 7.4A at 25°C

Low On-Resistance: 420mΩ max. at 3.7A, 10V

High Power Dissipation: 2.5W at Ta, 55W at Tc

Wide Operating Temperature Range: -55°C to 150°C

Fast Switching Capability

Product Advantages

Excellent power handling capability

Improved thermal management

Reliable performance across wide temperature range

Key Technical Parameters

Drain-Source Voltage (Vdss): 250V

Gate-Source Voltage (Vgs Max): ±30V

On-Resistance (Rds(on) Max): 420mΩ @ 3.7A, 10V

Continuous Drain Current (Id): 7.4A @ 25°C

Input Capacitance (Ciss Max): 700pF @ 25V

Power Dissipation (Max): 2.5W (Ta), 55W (Tc)

Quality and Safety Features

RoHS3 compliant

Qualified to AEC-Q101 automotive standard

Compatibility

Surface mount TO-252AA (DPAK) package

Compatible with various electronic circuit designs

Application Areas

Switching power supplies

Motor drives

Power management circuits

General purpose power switching

Product Lifecycle

Currently in production

Replacement/upgrade options available from manufacturer

Key Reasons to Choose This Product

Excellent power handling and thermal performance

Low on-resistance for efficient power conversion

Wide operating temperature range for reliable operation

Fast switching capability for high-speed applications

Compliance with automotive safety and quality standards