Manufacturer Part Number
FQD8P10TM-F085
Manufacturer
onsemi
Introduction
High-performance P-channel MOSFET transistor for automotive and industrial applications.
Product Features and Performance
100V drain-source voltage rating
Ultra-low on-resistance of 530mΩ
Continuous drain current up to 6.6A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 470pF
Maximum power dissipation of 2.5W (Ta) and 44W (Tc)
Product Advantages
Excellent thermal performance
Robust design for harsh environments
High efficiency and low power loss
Suitable for high-current, high-voltage applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 530mΩ @ 3.3A, 10V
Drain Current (Id): 6.6A (Tc)
Input Capacitance (Ciss): 470pF @ 25V
Quality and Safety Features
AEC-Q101 automotive qualified
RoHS3 compliant
Compatibility
TO-252-3 (D-Pak) surface mount package
Suitable for reflow soldering
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switched-mode power supplies
Product Lifecycle
Current and actively supported product
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent thermal performance and power handling capability
Robust design for harsh environments
High efficiency and low power loss
Suitable for high-current, high-voltage automotive and industrial applications
AEC-Q101 automotive qualification for reliability
RoHS3 compliance for environmental responsibility