Manufacturer Part Number
FQD8P10TM
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Single Transistor FETs, MOSFETs
Product Features and Performance
TO-252, (D-Pak) package
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
MOSFET (Metal Oxide) technology
Continuous Drain Current (Id) @ 25°C: 6.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
P-Channel FET Type
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Surface Mount Mounting Type
Product Advantages
High voltage capability
Low on-resistance
Low power dissipation
Suitable for high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Continuous Drain Current (Id) @ 25°C: 6.6A (Tc)
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Quality and Safety Features
Operating Temperature Range: -55°C ~ 150°C (TJ)
Robust MOSFET (Metal Oxide) technology
Compatibility
Suitable for a wide range of high-power electronic applications
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage capability up to 100 V
Low on-resistance of 530mOhm
Low power dissipation up to 44W
Suitable for high-power applications
Robust MOSFET (Metal Oxide) technology
Wide operating temperature range of -55°C to 150°C