Manufacturer Part Number
FQD7P20TM
Manufacturer
onsemi
Introduction
The FQD7P20TM is a P-channel enhancement-mode MOSFET from onsemi, designed for a variety of power switching applications.
Product Features and Performance
200V drain-source voltage
690mΩ maximum on-resistance at 2.85A, 10V
7A continuous drain current at 25°C
770pF maximum input capacitance at 25V
5W power dissipation at 25°C, 55W at case temperature
Product Advantages
Low on-resistance for improved efficiency
High voltage capability for versatile applications
Small DPak package for compact designs
Suitable for high-frequency switching
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 690mΩ
Continuous Drain Current (Id): 5.7A
Input Capacitance (Ciss): 770pF
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Surface mount design for easy integration into various power electronic circuits.
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
This product is currently in production and widely available. No known plans for discontinuation or replacement at this time.
Key Reasons to Choose
Low on-resistance for high efficiency
High voltage capability for versatile applications
Small package for compact designs
Suitable for high-frequency switching applications
RoHS3 compliance and AEC-Q101 qualification for quality and reliability
