Manufacturer Part Number
FQD7P06TM
Manufacturer
onsemi
Introduction
The FQD7P06TM is a P-channel MOSFET transistor from onsemi, a leading manufacturer of semiconductor products.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
25V Gate-Source Voltage (Vgs)
451mΩ On-Resistance (Rds(on)) at 2.7A, 10V
4A Continuous Drain Current (Id) at 25°C
295pF Input Capacitance (Ciss) at 25V
5W Power Dissipation at 25°C, 28W at 100°C
Operating Temperature Range: -55°C to 150°C
Product Advantages
Efficient power switching
Low on-resistance for low power loss
Wide operating temperature range
Suitable for a variety of power conversion applications
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
4V Gate-Source Threshold Voltage (Vgs(th)) at 250μA
2nC Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
TO-252AA (D-Pak) Surface Mount Package
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and power conversion applications.
Application Areas
Switching Power Supplies
Motor Drives
Battery Chargers
Power Amplifiers
General Purpose Power Switching
Product Lifecycle
The FQD7P06TM is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Excellent power handling capability with low on-resistance
Wide operating temperature range for diverse applications
Compact and efficient surface mount package
RoHS compliance for environmentally-friendly design
Proven reliability and performance from a trusted manufacturer