Manufacturer Part Number
FQD7P20TF
Manufacturer
onsemi
Introduction
The FQD7P20TF is a P-channel enhancement-mode power MOSFET designed for use in a wide range of power management and control applications.
Product Features and Performance
High-voltage capability up to 200V drain-to-source voltage
Low on-resistance of 690mΩ at 2.85A and 10V gate-to-source voltage
Fast switching with low gate charge of 25nC at 10V gate-to-source voltage
Wide operating temperature range from -55°C to 150°C
Power dissipation capability of 2.5W at ambient temperature and 55W at case temperature
Product Advantages
Excellent performance in power conversion and control applications
Reliable and robust design for demanding operating conditions
Efficient power management due to low on-resistance and fast switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id) at 25°C: 5.7A
Input Capacitance (Ciss): 770pF at 25V
Threshold Voltage (Vgs(th)): 5V at 250μA
Quality and Safety Features
Compliant with RoHS and REACH directives
Designed and manufactured to high quality standards
Compatibility
Suitable for a variety of power management and control applications, including but not limited to switch-mode power supplies, motor drives, and power amplifiers.
Application Areas
Power management and control
Switch-mode power supplies
Motor drives
Power amplifiers
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
High-voltage capability and low on-resistance for efficient power management
Fast switching and low gate charge for improved system performance
Wide operating temperature range for use in demanding environments
Reliable and robust design for long-term, reliable operation
Compliance with relevant quality and safety standards