Manufacturer Part Number
FQD17N08LTM
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor designed for a wide range of power conversion and control applications.
Product Features and Performance
80V drain-to-source voltage
100mΩ maximum on-resistance
9A continuous drain current at 25°C
520pF maximum input capacitance
5W maximum power dissipation at 25°C
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact D-Pak surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 100mΩ
Continuous Drain Current (Id): 12.9A
Input Capacitance (Ciss): 520pF
Power Dissipation (Pd): 2.5W
Quality and Safety Features
RoHS3 compliant
Designed for reliable operation from -55°C to 150°C
Compatibility
Surface mount TO-252-3 (D-Pak) package
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial controls
Product Lifecycle
This product is currently in production and available. No discontinuation or replacement is anticipated.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current handling capability for demanding applications
Compact surface mount package for space-constrained designs
Wide operating temperature range for industrial and automotive use
RoHS3 compliance for environmentally-friendly applications
