Manufacturer Part Number
FQD16N25CTM
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
TO-252, (D-Pak) package
TO-252-3, DPak (2 Leads + Tab), SC-63 package
-55°C ~ 150°C (TJ) operating temperature
250 V drain to source voltage (Vdss)
±30 V gate to source voltage (Vgs)
270 mOhm maximum on-state resistance (Rds On) at 8 A, 10 V
MOSFET (Metal Oxide) technology
16 A continuous drain current (Id) at 25°C (Tc)
1080 pF maximum input capacitance (Ciss) at 25 V
160 W maximum power dissipation (Tc)
N-Channel FET type
4 V maximum gate threshold voltage (Vgs(th)) at 250 A
10 V drive voltage (Max Rds On, Min Rds On)
5 nC maximum gate charge (Qg) at 10 V
Surface mount type
Product Advantages
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Wide operating temperature range
Small package size for space-constrained applications
Key Technical Parameters
Voltage: 250 V Vdss, ±30 V Vgs
Current: 16 A Id
Resistance: 270 mOhm Rds On
Capacitance: 1080 pF Ciss
Power: 160 W dissipation
Temperature: -55°C to 150°C
Quality and Safety Features
Reliable MOSFET technology
Suitable for high-power, high-voltage applications
Complies with industry safety standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Lighting ballasts
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade parts available
Key Reasons to Choose This Product
High voltage and current capability
Low on-state resistance for efficient power conversion
Wide operating temperature range
Small package size for space-constrained designs
Reliable MOSFET technology
Suitable for a wide range of power electronics applications
FQD17N08LTFonsemiMOSFET N-CH 80V 12.9A TO252